100-nm thick single-phase wurtzite BAlN films with boron contents over 10%
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2017-01-11Online Publication Date
2017-01-11Print Publication Date
2017-08Permanent link to this record
http://hdl.handle.net/10754/623013Metadata
Show full item recordAbstract
Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.Citation
Li, X., Wang, S., Liu, H., Ponce, F. A., Detchprohm, T., & Dupuis, R. D. (2017). 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%. Physica Status Solidi (b), 254(8), 1600699. doi:10.1002/pssb.201600699Sponsors
This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.Publisher
WileyJournal
physica status solidi (b)Additional Links
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600699/fullhttps://rss.onlinelibrary.wiley.com/doi/am-pdf/10.1002/pssb.201600699