100-nm thick single-phase wurtzite BAlN films with boron contents over 10%
Ponce, Fernando A.
Dupuis, Russell D.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2017-01-11
Print Publication Date2017-08
Permanent link to this recordhttp://hdl.handle.net/10754/623013
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AbstractGrowing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.
CitationLi X, Wang S, Liu H, Ponce FA, Detchprohm T, et al. (2017) 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%. physica status solidi (b): 1600699. Available: http://dx.doi.org/10.1002/pssb.201600699.
SponsorsThis work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.
Journalphysica status solidi (b)