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dc.contributor.authorShen, Chao
dc.contributor.authorLee, Changmin
dc.contributor.authorStegenburgs, Edgars
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorNg, Tien Khee
dc.contributor.authorNakamura, Shuji
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEl-Desouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-03-07T13:47:41Z
dc.date.available2017-03-07T13:47:41Z
dc.date.issued2017-02-28
dc.identifier.citationShen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, et al. (2017) Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Applied Physics Express 10: 042201. Available: http://dx.doi.org/10.7567/apex.10.042201.
dc.identifier.issn1882-0778
dc.identifier.issn1882-0786
dc.identifier.doi10.7567/apex.10.042201
dc.identifier.urihttp://hdl.handle.net/10754/622986
dc.description.abstractA high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.
dc.publisherIOP Publishing
dc.relation.urlhttp://iopscience.iop.org/article/10.7567/APEX.10.042201/meta
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleSemipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalApplied Physics Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionMaterials Department, University of California Santa Barbara (UCSB), Santa Barbara, CA 93106, U.S.A.
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
kaust.personShen, Chao
kaust.personStegenburgs, Edgars
kaust.personHolguin Lerma, Jorge Alberto
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2018-06-13T18:11:44Z
dc.date.published-online2017-02-28
dc.date.published-print2017-04-01


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Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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