Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system
Lerma, Jorge Holguin
Ng, Tien Khee
DenBaars, Steven P.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
KAUST Grant NumberBAS/1/1614-01-01
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AbstractA high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.
CitationShen C, Lee C, Stegenburgs E, Lerma JH, Ng TK, et al. (2017) Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system. Applied Physics Express 10: 042201. Available: http://dx.doi.org/10.7567/apex.10.042201.
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.
PublisherJapan Society of Applied Physics
JournalApplied Physics Express
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