Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy
Type
ArticleAuthors
Janjua, Bilal
Sun, Haiding

Zhao, Chao

Anjum, Dalaver H.

Wu, Feng
Alhamoud, Abdullah
Li, Xiaohang

Albadri, Abdulrahman M
Alyamani, Ahmed Y
El-Desouki , Munir M
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Electron Microscopy
Imaging and Characterization Core Lab
Photonics Laboratory
KAUST Grant Number
BAS/1/1614-01-01Date
2017Permanent link to this record
http://hdl.handle.net/10754/622985
Metadata
Show full item recordAbstract
The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.Citation
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, et al. (2017) Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy. Nanoscale. Available: http://dx.doi.org/10.1039/c7nr00006e.Sponsors
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.Publisher
Royal Society of Chemistry (RSC)Journal
Nanoscaleae974a485f413a2113503eed53cd6c53
10.1039/c7nr00006e