Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy
Anjum, Dalaver H.
Albadri, Abdulrahman M
Alyamani, Ahmed Y
El-Desouki , Munir M
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
Imaging and Characterization Core Lab
KAUST Grant NumberBAS/1/1614-01-01
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AbstractThe growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.
CitationJanjua B, Sun H, Zhao C, Anjum DH, Wu F, et al. (2017) Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy. Nanoscale. Available: http://dx.doi.org/10.1039/c7nr00006e.
SponsorsWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.
PublisherRoyal Society of Chemistry (RSC)