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dc.contributor.authorWang, Zhenwei*
dc.contributor.authorHe, Xin*
dc.contributor.authorZhang, Xixiang*
dc.contributor.authorAlshareef, Husam N.*
dc.date.accessioned2017-02-15T08:32:15Z
dc.date.available2017-02-15T08:32:15Z
dc.date.issued2016-08-30en
dc.identifier.citationWang Z, He X, Zhang X-X, Alshareef HN (2016) Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2. Advanced Materials 28: 9133–9141. Available: http://dx.doi.org/10.1002/adma.201602157.en
dc.identifier.issn0935-9648en
dc.identifier.pmid27571871
dc.identifier.doi10.1002/adma.201602157en
dc.identifier.urihttp://hdl.handle.net/10754/622895
dc.description.abstractA p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.en
dc.description.sponsorshipZ.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201602157/fullen
dc.subjectMos2en
dc.subjectSnoen
dc.subjectElectrostatic Force Microscopyen
dc.subjectGate-tunableen
dc.subjectVan Der Waals Heterojunctionsen
dc.titleHybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2en
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Program*
dc.identifier.journalAdvanced Materialsen
kaust.authorWang, Zhenwei*
kaust.authorHe, Xin*
kaust.authorZhang, Xixiang*
kaust.authorAlshareef, Husam N.*


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