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dc.contributor.authorWang, Zhenwei
dc.contributor.authorHe, Xin
dc.contributor.authorZhang, Xixiang
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2017-02-15T08:32:15Z
dc.date.available2017-02-15T08:32:15Z
dc.date.issued2016-08-30
dc.identifier.citationWang Z, He X, Zhang X-X, Alshareef HN (2016) Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2. Advanced Materials 28: 9133–9141. Available: http://dx.doi.org/10.1002/adma.201602157.
dc.identifier.issn0935-9648
dc.identifier.pmid27571871
dc.identifier.doi10.1002/adma.201602157
dc.identifier.urihttp://hdl.handle.net/10754/622895
dc.description.abstractA p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
dc.description.sponsorshipZ.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201602157/full
dc.subjectMos2
dc.subjectSno
dc.subjectElectrostatic Force Microscopy
dc.subjectGate-tunable
dc.subjectVan Der Waals Heterojunctions
dc.titleHybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
kaust.personWang, Zhenwei
kaust.personHe, Xin
kaust.personZhang, Xixiang
kaust.personAlshareef, Husam N.
dc.date.published-online2016-08-30
dc.date.published-print2016-11


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