Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/622895
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AbstractA p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
CitationWang Z, He X, Zhang X-X, Alshareef HN (2016) Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2. Advanced Materials 28: 9133–9141. Available: http://dx.doi.org/10.1002/adma.201602157.
SponsorsZ.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
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