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dc.contributor.authorShen, Chao
dc.contributor.authorLee, Changmin
dc.contributor.authorNg, Tien Khee
dc.contributor.authorSpeck, James S.
dc.contributor.authorNakamura, Shuji
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEldesouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-02-15T07:49:25Z
dc.date.available2017-02-15T07:49:25Z
dc.date.issued2017-01-30
dc.identifier.citationShen C, Lee C, Ng TK, Speck JS, Nakamura S, et al. (2016) GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode. 2016 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2016.7831077.
dc.identifier.doi10.1109/IPCon.2016.7831077
dc.identifier.urihttp://hdl.handle.net/10754/622880
dc.description.abstractA 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7831077/
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectBandwidth
dc.subjectDiode lasers
dc.subjectExtinction ratio
dc.subjectOptical modulation
dc.subjectOptical network units
dc.subjectSea measurements
dc.titleGHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journal2016 IEEE Photonics Conference (IPC)
dc.eprint.versionPost-print
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
kaust.personShen, Chao
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2018-06-13T16:07:05Z
dc.date.published-online2017-01-30
dc.date.published-print2016-10


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