Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Disruptive Electronic Applications (IDEA) Lab
Integrated Nanotechnology Lab
Permanent link to this recordhttp://hdl.handle.net/10754/622865
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AbstractA highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.
CitationGhoneim MT, Hussain MM (2017) Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics. Small: 1601801. Available: http://dx.doi.org/10.1002/smll.201601801.
SponsorsThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST).