Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Physical Science and Engineering Division (PSE)
Computer, Electrical and Mathematical Science and Engineering Division (CEMSE)
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AbstractWe investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.
CitationSpin Hall magnetoresistance in antiferromagnet/normal metal bilayers 2017 physica status solidi (RRL) - Rapid Research Letters