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    Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

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    Type
    Article
    Authors
    Wang, Ping
    Wang, Xinqiang
    Wang, Tao
    Tan, Chih Shan
    Sheng, Bowen
    Sun, Xiaoxiao
    Li, Mo
    Rong, Xin
    Zheng, Xiantong
    Chen, Zhaoying
    Yang, Xuelin
    Xu, Fujun
    Qin, Zhixin
    Zhang, Jian
    Zhang, Xixiang cc
    Shen, Bo
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2017-01-18
    Online Publication Date
    2017-01-18
    Print Publication Date
    2017-03
    Permanent link to this record
    http://hdl.handle.net/10754/622807
    
    Metadata
    Show full item record
    Abstract
    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.
    Citation
    Wang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.
    Sponsors
    This work was partly supported by the National Key Research and Development Program (Grant No. 2016YFB0400100), the National Basic Research Program of China (Grant No. 2013CB632800), the National Natural Science Foundation of China (Grant Nos. 61225019, 61376060, 61428401, and 61521004), the Science Challenge Project (Grant No. JCKY2016212A503), NSAF (Grant No. U1630109), the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science and Technology. The authors are grateful to Prof. Weikun Ge and Dr. Jun Li for their critical reading and polishing of the manuscript.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.201604854
    Additional Links
    http://onlinelibrary.wiley.com/doi/10.1002/adfm.201604854/full
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.201604854
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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