Tan, Chih Shan
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
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AbstractLattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.
CitationWang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.
SponsorsThis work was partly supported by the National Key Research and Development Program (Grant No. 2016YFB0400100), the National Basic Research Program of China (Grant No. 2013CB632800), the National Natural Science Foundation of China (Grant Nos. 61225019, 61376060, 61428401, and 61521004), the Science Challenge Project (Grant No. JCKY2016212A503), NSAF (Grant No. U1630109), the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science and Technology. The authors are grateful to Prof. Weikun Ge and Dr. Jun Li for their critical reading and polishing of the manuscript.
JournalAdvanced Functional Materials