Type
ArticleAuthors
Wang, PingWang, Xinqiang
Wang, Tao
Tan, Chih Shan
Sheng, Bowen
Sun, Xiaoxiao
Li, Mo
Rong, Xin
Zheng, Xiantong
Chen, Zhaoying
Yang, Xuelin
Xu, Fujun
Qin, Zhixin
Zhang, Jian
Zhang, Xixiang

Shen, Bo
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2017-01-18Online Publication Date
2017-01-18Print Publication Date
2017-03Permanent link to this record
http://hdl.handle.net/10754/622807
Metadata
Show full item recordAbstract
Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.Citation
Wang P, Wang X, Wang T, Tan C-S, Sheng B, et al. (2017) Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods. Advanced Functional Materials: 1604854. Available: http://dx.doi.org/10.1002/adfm.201604854.Sponsors
This work was partly supported by the National Key Research and Development Program (Grant No. 2016YFB0400100), the National Basic Research Program of China (Grant No. 2013CB632800), the National Natural Science Foundation of China (Grant Nos. 61225019, 61376060, 61428401, and 61521004), the Science Challenge Project (Grant No. JCKY2016212A503), NSAF (Grant No. U1630109), the CAEP Microsystem and THz Science and Technology Foundation (Grant No. CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science and Technology. The authors are grateful to Prof. Weikun Ge and Dr. Jun Li for their critical reading and polishing of the manuscript.Publisher
WileyJournal
Advanced Functional MaterialsAdditional Links
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201604854/fullae974a485f413a2113503eed53cd6c53
10.1002/adfm.201604854