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dc.contributor.authorMansour, Ahmed
dc.contributor.authorSaid, Marcel M.
dc.contributor.authorDey, Sukumar
dc.contributor.authorHu, Hanlin
dc.contributor.authorZhang, Siyuan
dc.contributor.authorMunir, Rahim
dc.contributor.authorZhang, Yadong
dc.contributor.authorMoudgil, Karttikay
dc.contributor.authorBarlow, Stephen
dc.contributor.authorMarder, Seth R.
dc.contributor.authorAmassian, Aram
dc.date.accessioned2017-01-29T13:51:39Z
dc.date.available2017-01-29T13:51:39Z
dc.date.issued2017-01-03
dc.identifier.citationMansour AE, Said MM, Dey S, Hu H, Zhang S, et al. (2017) Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants. Advanced Functional Materials: 1602004. Available: http://dx.doi.org/10.1002/adfm.201602004.
dc.identifier.issn1616-301X
dc.identifier.doi10.1002/adfm.201602004
dc.identifier.urihttp://hdl.handle.net/10754/622789
dc.description.abstractDoping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.
dc.description.sponsorshipThe authors thank Mr. A. R. Kirmani and Dr. G. O. Ngongang Ndjawa from KAUST for valuable discussions pertaining to photoelectron spectroscopy experiments, and Mrs. L. Jamshaid for her logistical support. This work was supported by the King Abdullah University of Science and Technology, by the National Science Foundation (through the MRSEC program, DMR-0820382, and through DMR-1305247), by the Department of the Navy, Office of Naval Research Award No. N00014-14-1-0126, and by Boeing. A.A. is grateful to SABIC for the Career Development SABIC Chair.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201602004/full
dc.rightsThis is the peer reviewed version of the following article: A. E. Mansour, M. M. Said, S. Dey, H. Hu, S. Zhang, R. Munir, Y. Zhang, K. Moudgil, S. Barlow, S. R. Marder, A. Amassian, Adv. Funct. Mater. 2017, 1602004., which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/adfm.201602004/full. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.subjectDoping
dc.subjectFew-layer graphene
dc.subjectMetal-organic molecular dopants
dc.subjectSolution-processed
dc.subjectTransparent conducting electrodes
dc.titleFacile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Organic Photonics and Electronics and School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta 30332-0400GA USA
kaust.personMansour, Ahmed
kaust.personDey, Sukumar
kaust.personHu, Hanlin
kaust.personMunir, Rahim
kaust.personAmassian, Aram
refterms.dateFOA2018-01-03T00:00:00Z
dc.date.published-online2017-01-03
dc.date.published-print2017-02


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