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dc.contributor.authorSemple, James
dc.contributor.authorWyatt-Moon, Gwenhivir
dc.contributor.authorGeorgiadou, Dimitra G
dc.contributor.authorMcLachlan, Martyn A.
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2017-01-29T13:51:39Z
dc.date.available2017-01-29T13:51:39Z
dc.date.issued2017-01-02
dc.identifier.citationSemple J, Wyatt-Moon G, Georgiadou DG, McLachlan MA, Anthopoulos TD (2017) Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography. IEEE Transactions on Electron Devices: 1–8. Available: http://dx.doi.org/10.1109/TED.2016.2638499.
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.doi10.1109/TED.2016.2638499
dc.identifier.urihttp://hdl.handle.net/10754/622788
dc.description.abstractElectronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.
dc.description.sponsorshipThis work was supported in part by the European Research Council AMPRO under Grant 280221, in part by the Engineering and Physical Sciences Research Council under Grant EP/P505550/1, and in part by the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) under Grant EP/K03099X/1
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7803587/
dc.rights(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectresistive switching
dc.subjectFlexible electronics
dc.subjectnanogap electrodes
dc.subjectnonvolatile memory
dc.titleSemiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalIEEE Transactions on Electron Devices
dc.eprint.versionPost-print
dc.contributor.institutionCentre for Plasic Electronics, Department of Physics, Imperial College London, London SW7 2AZ, U.K.
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-06-13T16:13:55Z


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