Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography
Georgiadou, Dimitra G.
McLachlan, Martyn A.
Anthopoulos, Thomas D.
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
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AbstractElectronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.
CitationSemple J, Wyatt-Moon G, Georgiadou DG, McLachlan MA, Anthopoulos TD (2017) Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography. IEEE Transactions on Electron Devices: 1–8. Available: http://dx.doi.org/10.1109/TED.2016.2638499.
SponsorsThis work was supported in part by the European Research Council AMPRO under Grant 280221, in part by the Engineering and Physical Sciences Research Council under Grant EP/P505550/1, and in part by the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) under Grant EP/K03099X/1