High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor
KAUST DepartmentLaboratory of Nano Oxides for Sustainable Energy
Material Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2016-12-13
Print Publication Date2017-01
Permanent link to this recordhttp://hdl.handle.net/10754/622774
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AbstractA solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.
CitationLi F, Chen Y, Ma C, Buttner U, Leo K, et al. (2016) High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor. Advanced Electronic Materials 3: 1600430. Available: http://dx.doi.org/10.1002/aelm.201600430.
SponsorsThis work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.
JournalAdvanced Electronic Materials