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    Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

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    Type
    Article
    Authors
    Isakov, Ivan
    Paterson, Alexandra F.
    Solomeshch, Olga
    Tessler, Nir
    Zhang, Qiang cc
    Li, Jun
    Zhang, Xixiang cc
    Fei, Zhuping
    Heeney, Martin
    Anthopoulos, Thomas D. cc
    KAUST Department
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Physical Science and Engineering (PSE) Division
    Thin Films & Characterization
    Date
    2016-12-29
    Online Publication Date
    2016-12-29
    Print Publication Date
    2016-12-26
    Permanent link to this record
    http://hdl.handle.net/10754/622711
    
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    Abstract
    We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
    Citation
    Isakov I, Paterson AF, Solomeshch O, Tessler N, Zhang Q, et al. (2016) Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters 109: 263301. Available: http://dx.doi.org/10.1063/1.4972988.
    Sponsors
    T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4972988
    Additional Links
    http://aip.scitation.org/doi/10.1063/1.4972988
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4972988
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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