Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
Paterson, Alexandra F.
Anthopoulos, Thomas D.
KAUST DepartmentMaterials Science and Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/622711
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AbstractWe report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctylbenzothieno[3,2-b]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.
CitationIsakov I, Paterson AF, Solomeshch O, Tessler N, Zhang Q, et al. (2016) Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters 109: 263301. Available: http://dx.doi.org/10.1063/1.4972988.
SponsorsT.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.
JournalApplied Physics Letters