Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs
Type
ArticleAuthors
Isakov, IvanPaterson, Alexandra F.
Solomeshch, Olga
Tessler, Nir
Zhang, Qiang

Li, Jun
Zhang, Xixiang

Fei, Zhuping
Heeney, Martin
Anthopoulos, Thomas D.

KAUST Department
Imaging and Characterization Core LabMaterial Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Thin Films & Characterization
Date
2016-12-29Online Publication Date
2016-12-29Print Publication Date
2016-12-26Permanent link to this record
http://hdl.handle.net/10754/622711
Metadata
Show full item recordAbstract
We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (CIDT-BT) and the p-type dopant CF was employed, whereas the isotype InO/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm/Vs. Hybrid complementary inverters based on these devices show high signal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.Citation
Isakov I, Paterson AF, Solomeshch O, Tessler N, Zhang Q, et al. (2016) Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs. Applied Physics Letters 109: 263301. Available: http://dx.doi.org/10.1063/1.4972988.Sponsors
T.D.A., I.I., and A.F.P acknowledge the financial support from Cambridge Display Technology Limited (Company No. 2672530). Q.Z., J.L., and X.X.Z. are supported financially by KAUST. O.S. acknowledges the support of the Center for Absorption in Science of the Ministry of Immigrant Absorption under the framework of the KAMEA Program.Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/1.4972988ae974a485f413a2113503eed53cd6c53
10.1063/1.4972988