Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures
Alshammari, Fwzah Hamud
KAUST DepartmentMaterials Science and Engineering Program
Online Publication Date2017-01-10
Print Publication Date2017-06
Permanent link to this recordhttp://hdl.handle.net/10754/622679
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AbstractIn this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 °C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density.
CitationAl-Shehri S, Al-Senany N, Altuwirqi R, Bayahya A, Al-Shammari F, et al. (2017) Green synthesis of CuxO nanoscale MOS capacitors processed at low temperatures. Surface and Coatings Technology. Available: http://dx.doi.org/10.1016/j.surfcoat.2017.01.028.
SponsorsThe authors would like to thank Dr. Mohamed N. Hedhili and Fan Zhang for their help with the XPS and TEM measurements, respectively.
JournalSurface and Coatings Technology