Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers
Lan, Yann Wen
Amiri, Pedram Khalili
Wang, Kang L.
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
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AbstractThe electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.
CitationShao Q, Yu G, Lan Y-W, Shi Y, Li M-Y, et al. (2016) Strong Rashba-Edelstein Effect-Induced Spin–Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers. Nano Letters 16: 7514–7520. Available: http://dx.doi.org/10.1021/acs.nanolett.6b03300.
SponsorsWe thank Haojun Zhang, Dan Wilkinson, and Bruce Dunn for discussions and assistance with experiments. Also, we thank the four anonymous reviewers whose comments and suggestions helped improve and clarify this manuscript. This work is supported as part of the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award No. DE-SC0012670. We are also very grateful to the support from the Function Accelerated nanoMaterial Engineering (FAME) Center and Center for Spintronic Materials, Interfaces and Novel Architectures (C-SPIN), two of six centers of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation (SRC) program sponsored by Microelectronics Advanced Research Corporation (MARCO) and Defense Advanced Research Projects Agency (DARPA). L.-J.L. acknowledges the support from King Abdullah University of Science and Technology (Saudi Arabia), Ministry of Science and Technology (MOST), and Taiwan Consortium of Emergent Crystalline Materials (TCECM).
PublisherAmerican Chemical Society (ACS)