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dc.contributor.authorAwan, Kashif M.
dc.contributor.authorDolgaleva, Ksenia
dc.contributor.authorMumthaz Muhammed, Mufasila
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2017-01-02T13:44:59Z
dc.date.available2017-01-02T13:44:59Z
dc.date.issued2016-08-11
dc.identifier.citationAwan KM, Dolgaleva K, Muhammed MM, Roqan IS (2016) Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths. 2016 Photonics North (PN). Available: http://dx.doi.org/10.1109/PN.2016.7537934.
dc.identifier.doi10.1109/PN.2016.7537934
dc.identifier.urihttp://hdl.handle.net/10754/622620
dc.description.abstractGallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7537934/
dc.rights(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectall-optical wavelength conversion
dc.subjectfour-wave mixing
dc.subjectGaN epitaxial growth
dc.subjectintegrated photonic circuits
dc.subjectnonlinear optics
dc.subjectphoton pair generation
dc.titleEpitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths
dc.typeConference Paper
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journal2016 Photonics North (PN)
dc.conference.date2016-05-24 to 2016-05-26
dc.conference.name2016 Photonics North, PN 2016
dc.conference.locationQuebec City, QC, CAN
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Electrical Engineering and Computer Science, Department of Physics and Max Planck Centre for Extreme and Quantum Photonics, University of Ottawa, Ottawa, Canada
kaust.personMumthaz Muhammed, Mufasila
kaust.personRoqan, Iman S.
refterms.dateFOA2018-06-13T15:29:03Z


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