Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Online Publication Date2016-08-11
Print Publication Date2016-05
Permanent link to this recordhttp://hdl.handle.net/10754/622620
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AbstractGallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications from all-optical signal processing to quantum computing and on-chip wavelength conversion. Despite its abundant use in commercial devices, there is still need for suitable substrate materials to reduce high densities of threading dislocations (TDs) and other structural defects like stacking faults, and grain boundaries. All these defects degrade the optical quality of the epi-grown GaN layer as they act as non-radiative recombination centers.
CitationAwan KM, Dolgaleva K, Muhammed MM, Roqan IS (2016) Epitaxially-grown Gallium Nitride on Gallium Oxide substrate for photon pair generation in visible and telecomm wavelengths. 2016 Photonics North (PN). Available: http://dx.doi.org/10.1109/PN.2016.7537934.
Journal2016 Photonics North (PN)
Conference/Event name2016 Photonics North, PN 2016