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dc.contributor.authorLin, Chih-Pin
dc.contributor.authorLyu, Li-Syuan
dc.contributor.authorLin, Ching-Ting
dc.contributor.authorLiu, Pang-Shiuan
dc.contributor.authorChang, Wen-Hao
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorHou, Tuo-Hung
dc.date.accessioned2017-01-02T09:55:29Z
dc.date.available2017-01-02T09:55:29Z
dc.date.issued2015-08-27
dc.identifier.citationChih-Pin Lin, Li-Syuan Lyu, Ching-Ting Lin, Pang-Shiuan Liu, Wen-Hao Chang, et al. (2015) Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits. Available: http://dx.doi.org/10.1109/IPFA.2015.7224436.
dc.identifier.doi10.1109/IPFA.2015.7224436
dc.identifier.urihttp://hdl.handle.net/10754/622553
dc.description.abstractWe investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7224436
dc.titleGrain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping
dc.typeConference Paper
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
dc.conference.date2015-06-29 to 2015-07-02
dc.conference.name22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
dc.conference.locationHsinchu, TWN
dc.contributor.institutionDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan
dc.contributor.institutionTaiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taiwan
kaust.personLi, Lain-Jong
dc.date.published-online2015-08-27
dc.date.published-print2015-06


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