First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode
AuthorsMajid, Mohammed Abdul
Oubei, Hassan M.
Alias, Mohd Sharizal
Ng, Tien Khee
Anjum, Dalaver H.
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
Advanced Nanofabrication and Thin Film Core Lab
Imaging and Characterization Core Lab
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AbstractWe report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.
CitationMajid MA, Al-Jabr AA, Oubei HM, Alias MS, Ng TK, et al. (2015) First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. 2015 IEEE Photonics Conference (IPC). Available: http://dx.doi.org/10.1109/IPCon.2015.7323633.
Conference/Event nameIEEE Photonics Conference, IPC 2015