Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact
Type
Conference PaperAuthors
Bahabry, R. R.Gumus, A.
Kutbee, A. T.
Wehbe, N.
Ahmed, S. M.
Ghoneim, M. T.
Lee, K. -T.
Rogers, J. A.
Hussain, M. M.
KAUST Department
Imaging and Characterization Core LabDate
2016-11-30Permanent link to this record
http://hdl.handle.net/10754/622530
Metadata
Show full item recordAbstract
We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.Citation
Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.Conference/Event name
43rd IEEE Photovoltaic Specialists Conference, PVSC 2016Additional Links
http://ieeexplore.ieee.org/document/7749668/ae974a485f413a2113503eed53cd6c53
10.1109/PVSC.2016.7749668