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    Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

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    Type
    Conference Paper
    Authors
    Bahabry, R. R.
    Gumus, A.
    Kutbee, A. T.
    Wehbe, N.
    Ahmed, S. M.
    Ghoneim, M. T.
    Lee, K. -T.
    Rogers, J. A.
    Hussain, M. M.
    KAUST Department
    Imaging and Characterization Core Lab
    Date
    2016-11-30
    Permanent link to this record
    http://hdl.handle.net/10754/622530
    
    Metadata
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    Abstract
    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.
    Citation
    Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
    Conference/Event name
    43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
    DOI
    10.1109/PVSC.2016.7749668
    Additional Links
    http://ieeexplore.ieee.org/document/7749668/
    ae974a485f413a2113503eed53cd6c53
    10.1109/PVSC.2016.7749668
    Scopus Count
    Collections
    Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab

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