Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

Type

Conference Paper

Authors

Bahabry, R. R.
Gumus, A.
Kutbee, A. T.
Wehbe, N.
Ahmed, S. M.
Ghoneim, M. T.
Lee, K. -T.
Rogers, J. A.
Hussain, M. M.

KAUST Department

Imaging and Characterization Core Lab

Date

2016-11-30

Permanent link to this record

http://hdl.handle.net/10754/622530

Metadata

Show full item record

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Citation

Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.