Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact
AuthorsBahabry, R. R.
Kutbee, A. T.
Ahmed, S. M.
Ghoneim, M. T.
Lee, K. -T.
Rogers, J. A.
Hussain, M. M.
KAUST DepartmentImaging and Characterization Core Lab
Online Publication Date2016-11-30
Print Publication Date2016-06
Permanent link to this recordhttp://hdl.handle.net/10754/622530
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AbstractWe report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.
CitationBahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, et al. (2016) Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Available: http://dx.doi.org/10.1109/PVSC.2016.7749668.
Conference/Event name43rd IEEE Photovoltaic Specialists Conference, PVSC 2016