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dc.contributor.authorAl-Jabr, Ahmad
dc.contributor.authorMajid, Mohammed Abdul
dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-01-02T09:55:27Z
dc.date.available2017-01-02T09:55:27Z
dc.date.issued2015-09-28
dc.identifier.citationAl-Jabr AA, Abdulmajed M, Bin Alias MS, Ng T, Ooi B (2015) Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser. Advanced Solid State Lasers. Available: http://dx.doi.org/10.1364/ASSL.2015.AM5A.46.
dc.identifier.doi10.1364/ASSL.2015.AM5A.46
dc.identifier.urihttp://hdl.handle.net/10754/622510
dc.description.abstractWe demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.
dc.publisherThe Optical Society
dc.titleAchieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Solid State Lasers
dc.conference.date2015-10-04 to 2015-10-09
dc.conference.nameAdvanced Solid State Lasers, ASSL 2015
dc.conference.locationBerlin, USA
kaust.personAl-Jabr, Ahmad
kaust.personMajid, Mohammed Abdul
kaust.personAlias, Mohd Sharizal
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
dc.date.published-online2015-09-28
dc.date.published-print2015


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