Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Date
2015-09-28Online Publication Date
2015-09-28Print Publication Date
2015Permanent link to this record
http://hdl.handle.net/10754/622510
Metadata
Show full item recordAbstract
We demonstrated the first orange laser diode at room temperature with a decent total output power of ∼46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.Citation
Al-Jabr AA, Abdulmajed M, Bin Alias MS, Ng T, Ooi B (2015) Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Diode Laser. Advanced Solid State Lasers. Available: http://dx.doi.org/10.1364/ASSL.2015.AM5A.46.Publisher
The Optical SocietyJournal
Advanced Solid State LasersConference/Event name
Advanced Solid State Lasers, ASSL 2015ae974a485f413a2113503eed53cd6c53
10.1364/ASSL.2015.AM5A.46