Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area
Huang, Jing Kai
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/622423
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AbstractTwo-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.
CitationLi H, Li P, Huang J-K, Li M-Y, Yang C-W, et al. (2016) Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area. ACS Nano 10: 10516–10523. Available: http://dx.doi.org/10.1021/acsnano.6b06496.
SponsorsThe authors thank KAUST for the support. Y.S. acknowledges the support from the National Natural Science Foundation of China (Grant No. 51602200). This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant No. 2016B050501005).
PublisherAmerican Chemical Society (ACS)