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dc.contributor.authorNikolka, Mark
dc.contributor.authorNasrallah, Iyad
dc.contributor.authorRose, Bradley Daniel
dc.contributor.authorRavva, Mahesh Kumar
dc.contributor.authorBroch, Katharina
dc.contributor.authorSadhanala, Aditya
dc.contributor.authorHarkin, David
dc.contributor.authorCharmet, Jerome
dc.contributor.authorHurhangee, Michael
dc.contributor.authorBrown, Adam
dc.contributor.authorIllig, Steffen
dc.contributor.authorToo, Patrick
dc.contributor.authorJongman, Jan
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorBredas, Jean-Luc
dc.contributor.authorSirringhaus, Henning
dc.date.accessioned2017-01-02T09:28:29Z
dc.date.available2017-01-02T09:28:29Z
dc.date.issued2016-12-12
dc.identifier.citationNikolka M, Nasrallah I, Rose B, Ravva MK, Broch K, et al. (2016) High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives. Nature Materials. Available: http://dx.doi.org/10.1038/nmat4785.
dc.identifier.issn1476-1122
dc.identifier.issn1476-4660
dc.identifier.doi10.1038/nmat4785
dc.identifier.urihttp://hdl.handle.net/10754/622411
dc.description.abstractDue to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.
dc.description.sponsorshipWe gratefully acknowledge financial support from Innovate UK (PORSCHED project) and the Engineering and Physical Sciences Research Council though a Programme Grant (EP/M005141/1). I.N. acknowledges studentship support from FlexEnable Ltd. K.B. gratefully acknowledges financial support from the Deutsche Forschungsgemeinschaft (BR 4869/1-1). A.S. would like to acknowledge support from the India-UK APEX project. B.R., M.K.R. and J.-L.B. acknowledge the financial support from King Abdullah University of Science and Technology (KAUST), the KAUST Competitive Research Grant program, and the Office of Naval Research Global (Award N62909-15-1-2003); they also acknowledge the IT Research Computing Team and Supercomputing Laboratory at KAUST for providing computational and storage resources.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/nmat/journal/vaop/ncurrent/full/nmat4785.html
dc.subjectElectronic devices
dc.subjectMolecular electronics
dc.titleHigh operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentChemical Science Program
dc.identifier.journalNature Materials
dc.contributor.institutionOptoelectronics Group, Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, UK
dc.contributor.institutionDepartment of Chemistry, Lensfield Road, Cambridge CB2 1EW, UK
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK
dc.contributor.institutionFlexEnable Ltd, 34 Cambridge Science Park, Cambridge CB4 0FX, UK
kaust.personRose, Bradley Daniel
kaust.personRavva, Mahesh Kumar
kaust.personMcCulloch, Iain
kaust.personBredas, Jean-Luc


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