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dc.contributor.authorAlshammari, Fwzah Hamud
dc.contributor.authorNayak, Pradipta K.
dc.contributor.authorWang, Zhenwei
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2017-01-02T09:28:28Z
dc.date.available2017-01-02T09:28:28Z
dc.date.issued2016-08-25
dc.identifier.citationAlshammari FH, Nayak PK, Wang Z, Alshareef HN (2016) Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics. ACS Applied Materials & Interfaces 8: 22751–22755. Available: http://dx.doi.org/10.1021/acsami.6b06498.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid27553091
dc.identifier.doi10.1021/acsami.6b06498
dc.identifier.urihttp://hdl.handle.net/10754/622399
dc.description.abstractWe report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/full/10.1021/acsami.6b06498
dc.subjectaluminum oxide
dc.subjectbilayer
dc.subjecttantalum oxide
dc.subjectthin film transistor
dc.subjectzinc oxide
dc.titleEnhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
kaust.personAlshammari, Fwzah Hamud
kaust.personNayak, Pradipta K.
kaust.personWang, Zhenwei
kaust.personAlshareef, Husam N.
dc.date.published-online2016-08-25
dc.date.published-print2016-09-07


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