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    Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

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    Type
    Article
    Authors
    Alshammari, Fwzah Hamud
    Nayak, Pradipta K.
    Wang, Zhenwei cc
    Alshareef, Husam N. cc
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2016-08-25
    Online Publication Date
    2016-08-25
    Print Publication Date
    2016-09-07
    Permanent link to this record
    http://hdl.handle.net/10754/622399
    
    Metadata
    Show full item record
    Abstract
    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.
    Citation
    Alshammari FH, Nayak PK, Wang Z, Alshareef HN (2016) Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics. ACS Applied Materials & Interfaces 8: 22751–22755. Available: http://dx.doi.org/10.1021/acsami.6b06498.
    Sponsors
    Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/acsami.6b06498
    PubMed ID
    27553091
    Additional Links
    http://pubs.acs.org/doi/full/10.1021/acsami.6b06498
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsami.6b06498
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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