Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications
Nielsen, Christian B.
White, Andrew J P
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Chemical Science Program
KAUST Solar Center (KSC)
Permanent link to this recordhttp://hdl.handle.net/10754/622378
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AbstractTwo new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.
CitationYue W, Nikolka M, Xiao M, Sadhanala A, Nielsen CB, et al. (2016) Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications. J Mater Chem C 4: 9704–9710. Available: http://dx.doi.org/10.1039/c6tc03000a.
SponsorsWe thank Marie Curie Intra-European Fellowship with the 7th European Community Framework Programme (FP7-PEOPLE-2013-IEF-622187), EC FP7 Project SC2, EC FP7 Project ArtESun, EC FP7 Project PolyMed, and EPSRC Project EP/G037515/1 for financial support.
PublisherRoyal Society of Chemistry (RSC)
JournalJ. Mater. Chem. C