Type
ArticleAuthors
Huang, Jyun-HongChen, Hsing-Hung
Liu, Pang-Shiuan
Lu, Li-Syuan
Wu, Chien-Ting
Chou, Cheng-Tung
Lee, Yao-Jen
Li, Lain-Jong

Chang, Wen-Hao

Hou, Tuo-Hung
KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2016-06-06Permanent link to this record
http://hdl.handle.net/10754/622354
Metadata
Show full item recordAbstract
Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).Citation
Huang J-H, Chen H-H, Liu P-S, Lu L-S, Wu C-T, et al. (2016) Large-area few-layer MoS 2 deposited by sputtering . Materials Research Express 3: 065007. Available: http://dx.doi.org/10.1088/2053-1591/3/6/065007.Sponsors
This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.Publisher
IOP PublishingJournal
Materials Research ExpressAdditional Links
http://iopscience.iop.org/article/10.1088/2053-1591/3/6/065007ae974a485f413a2113503eed53cd6c53
10.1088/2053-1591/3/6/065007