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    Large-area few-layer MoS 2 deposited by sputtering

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    Type
    Article
    Authors
    Huang, Jyun-Hong
    Chen, Hsing-Hung
    Liu, Pang-Shiuan
    Lu, Li-Syuan
    Wu, Chien-Ting
    Chou, Cheng-Tung
    Lee, Yao-Jen
    Li, Lain-Jong cc
    Chang, Wen-Hao cc
    Hou, Tuo-Hung
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2016-06-06
    Permanent link to this record
    http://hdl.handle.net/10754/622354
    
    Metadata
    Show full item record
    Abstract
    Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).
    Citation
    Huang J-H, Chen H-H, Liu P-S, Lu L-S, Wu C-T, et al. (2016) Large-area few-layer MoS 2 deposited by sputtering . Materials Research Express 3: 065007. Available: http://dx.doi.org/10.1088/2053-1591/3/6/065007.
    Sponsors
    This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.
    Publisher
    IOP Publishing
    Journal
    Materials Research Express
    DOI
    10.1088/2053-1591/3/6/065007
    Additional Links
    http://iopscience.iop.org/article/10.1088/2053-1591/3/6/065007
    ae974a485f413a2113503eed53cd6c53
    10.1088/2053-1591/3/6/065007
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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