Photon management of GaN-based optoelectronic devices via nanoscaled phenomena
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Date
2016-09-06Online Publication Date
2016-09-06Print Publication Date
2016-09Permanent link to this record
http://hdl.handle.net/10754/622327
Metadata
Show full item recordAbstract
Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.Citation
Tsai Y-L, Lai K-Y, Lee M-J, Liao Y-K, Ooi BS, et al. (2016) Photon management of GaN-based optoelectronic devices via nanoscaled phenomena. Progress in Quantum Electronics 49: 1–25. Available: http://dx.doi.org/10.1016/j.pquantelec.2016.08.001.Sponsors
This work was supported by Baseline Fund of King Abdullah University of Science & Technology (KAUST), and the Ministry of Science Technology in Taiwan (Grant MOST105-3113-E-008-008-CC2 and MOST 105-2221-E-008-064).Publisher
Elsevier BVJournal
Progress in Quantum ElectronicsAdditional Links
http://www.sciencedirect.com/science/article/pii/S0079672716300167ae974a485f413a2113503eed53cd6c53
10.1016/j.pquantelec.2016.08.001