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dc.contributor.authorDetchprohm, T.
dc.contributor.authorLi, Xiaohang
dc.contributor.authorShen, S.-C.
dc.contributor.authorYoder, P.D.
dc.contributor.authorDupuis, R.D.
dc.date.accessioned2017-01-02T08:42:37Z
dc.date.available2017-01-02T08:42:37Z
dc.date.issued2016-11-05
dc.identifier.citationDetchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.
dc.identifier.issn0080-8784
dc.identifier.doi10.1016/bs.semsem.2016.09.001
dc.identifier.urihttp://hdl.handle.net/10754/622206
dc.description.abstractThe III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
dc.description.sponsorshipThe work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S008087841630028X
dc.subjectMetalorganic chemical vapor deposition
dc.subjectIII-N
dc.subjectAlGaN
dc.subjectAlN
dc.subjectUltraviolet emitters
dc.subjectUltraviolet photodetectors
dc.subjectDeep ultraviolet
dc.subjectDeep-ultraviolet devices
dc.titleIII-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
dc.typeBook Chapter
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalSemiconductors and Semimetals
dc.contributor.institutionCenter for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States
kaust.personLi, Xiaohang
dc.date.published-online2016-11-05
dc.date.published-print2017


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