III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

Type
Book Chapter

Authors
Detchprohm, T.
Li, Xiaohang
Shen, S.-C.
Yoder, P.D.
Dupuis, R.D.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program

Online Publication Date
2016-11-05

Print Publication Date
2017

Date
2016-11-05

Abstract
The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

Citation
Detchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.

Acknowledgements
The work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

Publisher
Elsevier BV

Journal
Semiconductors and Semimetals

DOI
10.1016/bs.semsem.2016.09.001

Additional Links
http://www.sciencedirect.com/science/article/pii/S008087841630028X

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