III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
Type
Book Chapter
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2016-11-05Online Publication Date
2016-11-05Print Publication Date
2017Permanent link to this record
http://hdl.handle.net/10754/622206Metadata
Show full item recordAbstract
The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.Citation
Detchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.Sponsors
The work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.Publisher
Elsevier BVJournal
Semiconductors and SemimetalsAdditional Links
http://www.sciencedirect.com/science/article/pii/S008087841630028XScopus Count
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