KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/622206
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AbstractThe III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
CitationDetchprohm T, Li X, Shen S-C, Yoder PD, Dupuis RD (2016) III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors. Semiconductors and Semimetals. Available: http://dx.doi.org/10.1016/bs.semsem.2016.09.001.
SponsorsThe work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
JournalSemiconductors and Semimetals
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Effect of ultraviolet illumination on metal oxide resistive memoryDuran Retamal, Jose Ramon; Kang, Chen-Fang; Ho, Chih-Hsiang; Ke, Jr-Jian; Chang, Wen-Yuan; He, Jr-Hau (Applied Physics Letters, AIP Publishing, 2014-12-22) [Article]We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.
Deep-ultraviolet Raman scattering spectroscopy of monolayer WS2Liu, Hsiang-Lin; Yang, Teng; Tatsumi, Yuki; Zhang, Ye; Dong, Baojuan; Guo, Huaihong; Zhang, Zhidong; Kumamoto, Yasuaki; Li, Ming-Yang; Li, Lain-Jong; Saito, Riichiro; Kawata, Satoshi (Scientific Reports, Springer Nature, 2018-07-24) [Article]Raman scattering measurements of monolayer WS2 are reported as a function of the laser excitation energies from the near-infrared (1.58 eV) to the deep-ultraviolet (4.82 eV). In particular, we observed several strong Raman peaks in the range of 700∼850 cm-1 with the deep-ultraviolet laser lights (4.66 eV and 4.82 eV). Using the first-principles calculations, these peaks and other weak peaks were appropriately assigned by the double resonance Raman scattering spectra of phonons around the M and K points in the hexagonal Brillouin zone. The relative intensity of the first-order [Formula: see text] to A1g peak changes dramatically with the 1.58 eV and 2.33 eV laser excitations, while the comparable relative intensity was observed for other laser energies. The disappearance of the [Formula: see text] peak with the 1.58 eV laser light comes from the fact that valley polarization of the laser light surpasses the [Formula: see text] mode since the [Formula: see text] mode is the helicity-exchange Raman mode. On the other hand, the disappearance of the A1g peak with the 2.33 eV laser light might be due to the strain effect on the electron-phonon matrix element.
Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowiresPriante, Davide; Elafandy, Rami T.; Prabaswara, Aditya; Janjua, Bilal; Zhao, Chao; Alias, Mohd Sharizal; Tangi, Malleswararao; Alaskar, Yazeed; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S. (Journal of Applied Physics, AIP, 2018-07-05) [Article]The diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.