Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2016-11-29
Print Publication Date2016-12
Permanent link to this recordhttp://hdl.handle.net/10754/622109
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AbstractMultilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.
CitationPark JH, Alshammari FH, Wang Z, Alshareef HN (2016) Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors. Advanced Materials Interfaces 3: 1600713. Available: http://dx.doi.org/10.1002/admi.201600713.
SponsorsResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors wish to thank Pradipta Nayak for some technical discussions, and core lab staff for their excellent support.
JournalAdvanced Materials Interfaces