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dc.contributor.authorZhang, Bo
dc.contributor.authorZheng, Tao
dc.contributor.authorWang, Qingxiao
dc.contributor.authorZhu, Yihan
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorKim, Moon J.
dc.contributor.authorGnade, Bruce E.
dc.date.accessioned2016-12-29T13:20:20Z
dc.date.available2016-12-29T13:20:20Z
dc.date.issued2016-12-28
dc.identifier.citationZhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, et al. (2016) Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si. Journal of Alloys and Compounds. Available: http://dx.doi.org/10.1016/j.jallcom.2016.12.229.
dc.identifier.issn0925-8388
dc.identifier.doi10.1016/j.jallcom.2016.12.229
dc.identifier.urihttp://hdl.handle.net/10754/622082
dc.description.abstractWe present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.
dc.description.sponsorshipThis work is partially supported by the II-VI foundation. The authors would like to thank Wallace Martin, Gordon Pollack and John Maynard from the University of Texas at Dallas cleanroom.
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0925838816341457
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Alloys and Compounds. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Alloys and Compounds, 28 December 2016. DOI: 10.1016/j.jallcom.2016.12.229
dc.subjectThermoelectric
dc.subjectThin-film Mg2Si
dc.subjectSpecific contact resistivity (SCR)
dc.subjectCross bridge kelvin resistor (CBKR) method
dc.subjectNi diffusion
dc.subjectStability
dc.titleContact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
dc.typeArticle
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Alloys and Compounds
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States
kaust.personZhu, Yihan
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-12-28T00:00:00Z
dc.date.published-online2016-12-28
dc.date.published-print2017-03


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