Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
KAUST DepartmentAdvanced Membranes and Porous Materials Research Center
Functional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2016-12-28
Print Publication Date2017-03
Permanent link to this recordhttp://hdl.handle.net/10754/622082
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AbstractWe present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.
CitationZhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, et al. (2016) Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si. Journal of Alloys and Compounds. Available: http://dx.doi.org/10.1016/j.jallcom.2016.12.229.
SponsorsThis work is partially supported by the II-VI foundation. The authors would like to thank Wallace Martin, Gordon Pollack and John Maynard from the University of Texas at Dallas cleanroom.
JournalJournal of Alloys and Compounds