Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si
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Type
ArticleKAUST Department
Advanced Membranes and Porous Materials Research CenterFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2016-12-28Online Publication Date
2016-12-28Print Publication Date
2017-03Permanent link to this record
http://hdl.handle.net/10754/622082
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Show full item recordAbstract
We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.Citation
Zhang B, Zheng T, Wang Q, Zhu Y, Alshareef HN, et al. (2016) Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si. Journal of Alloys and Compounds. Available: http://dx.doi.org/10.1016/j.jallcom.2016.12.229.Sponsors
This work is partially supported by the II-VI foundation. The authors would like to thank Wallace Martin, Gordon Pollack and John Maynard from the University of Texas at Dallas cleanroom.Publisher
Elsevier BVJournal
Journal of Alloys and CompoundsAdditional Links
http://www.sciencedirect.com/science/article/pii/S0925838816341457ae974a485f413a2113503eed53cd6c53
10.1016/j.jallcom.2016.12.229