Show simple item record

dc.contributor.authorWerner, Jérémie
dc.contributor.authorWalter, Arnaud
dc.contributor.authorRucavado, Esteban
dc.contributor.authorMoon, Soo Jin
dc.contributor.authorSacchetto, Davide
dc.contributor.authorRienaecker, Michael
dc.contributor.authorPeibst, Robby
dc.contributor.authorBrendel, Rolf
dc.contributor.authorNiquille, Xavier
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorLöper, Philipp
dc.contributor.authorMorales-Masis, Monica
dc.contributor.authorNicolay, Sylvain
dc.contributor.authorNiesen, Bjoern
dc.contributor.authorBallif, Christophe
dc.date.accessioned2016-12-22T13:34:56Z
dc.date.available2016-12-22T13:34:56Z
dc.date.issued2016-12-05
dc.identifier.citationWerner J, Walter A, Rucavado E, Moon S-J, Sacchetto D, et al. (2016) Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells. Applied Physics Letters 109: 233902. Available: http://dx.doi.org/10.1063/1.4971361.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4971361
dc.identifier.urihttp://hdl.handle.net/10754/622069
dc.description.abstractPerovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)
dc.description.sponsorshipSwiss Office of Energy[SI/501072-01]
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/full/10.1063/1.4971361
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Werner, J., Walter, A., Rucavado, E., Moon, S.J., Sacchetto, D., Rienaecker, M., Peibst, R., Brendel, R., Niquille, X., De Wolf, S. and Löper, P., 2016. Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells. Applied Physics Letters and may be found at http://aip.scitation.org/doi/full/10.1063/1.4971361.
dc.titleZinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, Saudi Arabia
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionEcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, Neuchâtel, Switzerland
dc.contributor.institutionCSEM, PV-Center, Jaquet-Droz 1, Neuchâtel, Switzerland
dc.contributor.institutionInstitute for Solar Energy Research Hamelin (ISFH), Emmerthal, Germany
kaust.personDe Wolf, Stefaan
refterms.dateFOA2017-12-05T00:00:00Z


Files in this item

Thumbnail
Name:
12E4971361.pdf
Size:
722.9Kb
Format:
PDF
Description:
Main article

This item appears in the following Collection(s)

Show simple item record