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dc.contributor.authorLan, Yann-Wen
dc.contributor.authorJr., Carlos M. Torres,
dc.contributor.authorZhu, Xiaodan
dc.contributor.authorQasem, Hussam
dc.contributor.authorAdleman, James R.
dc.contributor.authorLerner, Mitchell B.
dc.contributor.authorTsai, Shin-Hung
dc.contributor.authorShi, Yumeng
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorYeh, Wen-Kuan
dc.contributor.authorWang, Kang L.
dc.date.accessioned2016-12-20T05:52:11Z
dc.date.available2016-12-20T05:52:11Z
dc.date.issued2016-09-01
dc.identifier.citationLan Y-W, Torres, Jr. CM, Zhu X, Qasem H, Adleman JR, et al. (2016) Dual-mode operation of 2D material-base hot electron transistors. Scientific Reports 6: 32503. Available: http://dx.doi.org/10.1038/srep32503.
dc.identifier.issn2045-2322
dc.identifier.pmid27581550
dc.identifier.doi10.1038/srep32503
dc.identifier.urihttp://hdl.handle.net/10754/622039
dc.description.abstractVertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.
dc.description.sponsorshipWe would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). This work was in part supported by the National Science Foundation (NSF) under Award # NSF-EFRI-1433541. C. M. T. Jr. thanks the Department of Defense SMART (Science, Mathematics, and Research for Transformation) Scholarship for graduate scholarship funding. This research was funded in part by the National Science Council of Taiwan under contract No. NSC 103-2917-I-564-017.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/articles/srep32503
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleDual-mode operation of 2D material-base hot electron transistors
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalScientific Reports
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionNational Nano Device Laboratories (NDL), Hsinchu, Taiwan
dc.contributor.institutionDepartment of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, United States
dc.contributor.institutionSpace and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, CA, United States
dc.contributor.institutionNanomedical Diagnostics, Production Division, San Diego, CA, United States
dc.contributor.institutionDepartment of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan
dc.contributor.institutionNational Nano Device Laboratories (NDL), National Applied Research Laboratories, Taipei, Taiwan
kaust.personShi, Yumeng
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-13T14:18:14Z
dc.date.published-online2016-09-01
dc.date.published-print2016-10


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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/