Jr., Carlos M. Torres,
Adleman, James R.
Lerner, Mitchell B.
Wang, Kang L.
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2016-09-01
Print Publication Date2016-10
Permanent link to this recordhttp://hdl.handle.net/10754/622039
MetadataShow full item record
AbstractVertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.
CitationLan Y-W, Torres, Jr. CM, Zhu X, Qasem H, Adleman JR, et al. (2016) Dual-mode operation of 2D material-base hot electron transistors. Scientific Reports 6: 32503. Available: http://dx.doi.org/10.1038/srep32503.
SponsorsWe would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). This work was in part supported by the National Science Foundation (NSF) under Award # NSF-EFRI-1433541. C. M. T. Jr. thanks the Department of Defense SMART (Science, Mathematics, and Research for Transformation) Scholarship for graduate scholarship funding. This research was funded in part by the National Science Council of Taiwan under contract No. NSC 103-2917-I-564-017.
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