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dc.contributor.authorKobayashi, Eiji
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorLevrat, Jacques
dc.contributor.authorChristmann, Gabriel
dc.contributor.authorDescoeudres, Antoine
dc.contributor.authorNicolay, Sylvain
dc.contributor.authorDespeisse, Matthieu
dc.contributor.authorWatabe, Yoshimi
dc.contributor.authorBallif, Christophe
dc.date.accessioned2016-11-21T13:49:24Z
dc.date.available2016-11-21T13:49:24Z
dc.date.issued2016-10-11
dc.identifier.citationKobayashi E, De Wolf S, Levrat J, Christmann G, Descoeudres A, et al. (2016) Light-induced performance increase of silicon heterojunction solar cells. Applied Physics Letters 109: 153503. Available: http://dx.doi.org/10.1063/1.4964835.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4964835
dc.identifier.urihttp://hdl.handle.net/10754/621851
dc.description.abstractSilicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either due to light soaking or (dark) forward-voltage bias increases the open circuit voltage and fill factor of finished cells, leading to a conversion efficiency gain of up to 0.3% absolute. This phenomenon contrasts markedly with the light-induced degradation known for thin-film a-Si:H solar cells. We associate our performance gain with an increase in surface passivation, which we find is specific to doped a-Si:H/c-Si structures. Our experiments suggest that this improvement originates from a reduced density of recombination-active interface states. To understand the time dependence of the observed phenomena, a kinetic model is presented.
dc.description.sponsorshipThe authors gratefully acknowledge Jan Haschke, Silvia Martin de Nicolas, Raphaël Monnard, Jean Cattin, Andrea Tomasi, Gizem Nogay, Andrea Ingenito, Philipp Löper, Franz-Josef Haug, Philipp Wyss, Josua Stuckelberger, Jonathan Champliaud, and Christophe Allebé for fruitful discussions. Financial support of Swiss Federal Office of Energy, EU FP7 program (CHETAAH Project, Contract No. 609788), and King Abdullah University of Science and Technology (KAUST) is acknowledged.
dc.publisherAIP Publishing
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/109/15/10.1063/1.4964835
dc.rightsArchived with thanks to Applied Physics Letters
dc.titleLight-induced performance increase of silicon heterojunction solar cells
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionÉcole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue de la Maladière 71b, CH-2002 Neuchâtel, Switzerland
dc.contributor.institutionChoshu Industry Co., Ltd., 3740, Shin-yamanoi, Sanyo Onoda, Yamaguchi 757-8511, Japan
dc.contributor.institutionDepartment of Materials Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
dc.contributor.institutionCSEM PV-Center, Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland
kaust.personDe Wolf, Stefaan
refterms.dateFOA2017-10-11T00:00:00Z
dc.date.published-online2016-10-11
dc.date.published-print2016-10-10


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