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AbstractSi-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75<xGe<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.
CitationCai F, Anjum DH, Zhang X, Xia G (Maggie) (2016) Study of Si-Ge interdiffusion with phosphorus doping. Journal of Applied Physics 120: 165108. Available: http://dx.doi.org/10.1063/1.4966570.
SponsorsThis work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.
JournalJournal of Applied Physics