Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure
KAUST DepartmentComputational Physics and Materials Science (CPMS)
Imaging and Characterization Core Lab
KAUST Supercomputing Laboratory (KSL)
Material Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Supercomputing, Computational Scientists
Thin Films & Characterization
Online Publication Date2016-10-27
Print Publication Date2016-10-24
Permanent link to this recordhttp://hdl.handle.net/10754/621848
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AbstractMechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.
CitationHe X, Li H, Zhu Z, Dai Z, Yang Y, et al. (2016) Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure. Applied Physics Letters 109: 173105. Available: http://dx.doi.org/10.1063/1.4966218.
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). H. Li acknowledges financial support from the National Natural Science Foundation of China (Grant No. 21571101), Specially Appointed Professors by Universities in Jiangsu Province, and the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 15KJB430016).
JournalApplied Physics Letters