High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications
Ng, Tien Khee
Leonard, John T.
DenBaars, Steven P.
Speck, James S.
Alyamani, Ahmed Y.
El-desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
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AbstractA high-brightness, droop-free, and speckle-free InGaN/GaN quantum well blue superluminescent diode (SLD) was demonstrated on a semipolar (2021) GaN substrate. The 447-nm emitting SLD has a broad spectral linewidth of 6.3 nm at an optical power of 123 mW. A peak optical power of 256 mW was achieved at 700 mA CW injection current. By combining YAG:Ce phosphor, SLD-generated white light shows a color-rendering index (CRI) of 68.9 and a correlated color temperature (CCT) of 4340 K. The measured frequency response of the SLD revealed a -3 dB bandwidth of 560 MHz, thus demonstrating the feasibility of the device for both solid-state lighting (SSL) and visible-light communication (VLC) applications. © 2016 Optical Society of America.
CitationShen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, et al. (2016) High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters 41: 2608. Available: http://dx.doi.org/10.1364/OL.41.002608.
SponsorsKing Abdullah University of Science and Technology (KAUST) (KAUST BAS/1/1614-01-01); King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008).
PublisherThe Optical Society