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dc.contributor.authorMottram, Alexander D.
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorPattanasattayavong, Pichaya
dc.contributor.authorZhao, Kui
dc.contributor.authorAmassian, Aram
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2016-11-03T13:21:36Z
dc.date.available2016-11-03T13:21:36Z
dc.date.issued2016-02-10
dc.identifier.citationMottram AD, Lin Y-H, Pattanasattayavong P, Zhao K, Amassian A, et al. (2016) Quasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications . ACS Applied Materials & Interfaces 8: 4894–4902. Available: http://dx.doi.org/10.1021/acsami.5b11210.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid26863603
dc.identifier.doi10.1021/acsami.5b11210
dc.identifier.urihttp://hdl.handle.net/10754/621639
dc.description.abstract© 2016 American Chemical Society. We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼106 and a responsivity value of up to 2 × 103 A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
dc.description.sponsorshipA.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. P.P. acknowledges the Anandamahidol Foundation, Thailand, for financial support.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectindium oxide
dc.subjectmetal oxide transistor
dc.subjectphotodetector
dc.subjectphotosensitivity
dc.subjectphototransistor
dc.subjectresponsivity
dc.titleQuasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London, United Kingdom
dc.contributor.institutionDepartment of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, Wangchan, Rayong, Thailand
kaust.personZhao, Kui
kaust.personAmassian, Aram
dc.date.published-online2016-02-10
dc.date.published-print2016-02-24


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