Quasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications
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ArticleAuthors
Mottram, Alexander D.Lin, Yen-Hung
Pattanasattayavong, Pichaya

Zhao, Kui

Amassian, Aram

Anthopoulos, Thomas D.

KAUST Department
KAUST Solar Center (KSC)Material Science and Engineering Program
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
Date
2016-02-10Online Publication Date
2016-02-10Print Publication Date
2016-02-24Embargo End Date
2017-02-10Permanent link to this record
http://hdl.handle.net/10754/621639
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© 2016 American Chemical Society. We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼106 and a responsivity value of up to 2 × 103 A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.Citation
Mottram AD, Lin Y-H, Pattanasattayavong P, Zhao K, Amassian A, et al. (2016) Quasi Two-Dimensional Dye-Sensitized In 2 O 3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications . ACS Applied Materials & Interfaces 8: 4894–4902. Available: http://dx.doi.org/10.1021/acsami.5b11210.Sponsors
A.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. P.P. acknowledges the Anandamahidol Foundation, Thailand, for financial support.Publisher
American Chemical Society (ACS)PubMed ID
26863603Additional Links
http://spiral.imperial.ac.uk/bitstream/10044/1/29770/2/Mottram%20et%20al.%202016.pdfae974a485f413a2113503eed53cd6c53
10.1021/acsami.5b11210
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