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dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorHedhili, Mohamed N.
dc.contributor.authorWehbe, Nimer
dc.contributor.authorMcLachlan, Martyn A.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2016-11-03T13:21:26Z
dc.date.available2016-11-03T13:21:26Z
dc.date.issued2016-07-12
dc.identifier.citationHota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.
dc.identifier.issn2196-7350
dc.identifier.doi10.1002/admi.201600192
dc.identifier.urihttp://hdl.handle.net/10754/621633
dc.description.abstractReproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.publisherWiley
dc.relation.urlhttp://spiral.imperial.ac.uk/bitstream/10044/1/43070/2/HfZnOx%20Manuscrippt_08%2003%202016hna%5b2%5d.pdf
dc.rightsArchived with thanks to Wiley
dc.rightsThis file is an open access version redistributed from: http://spiral.imperial.ac.uk/bitstream/10044/1/43070/2/HfZnOx%20Manuscrippt_08%2003%202016hna%5b2%5d.pdf
dc.subjectMixed oxides
dc.titleMultistate Resistive Switching Memory for Synaptic Memory Applications
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSurface Science
dc.identifier.journalAdvanced Materials Interfaces
dc.rights.embargodate2017-07-12
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UK
kaust.personHota, Mrinal Kanti
kaust.personHedhili, Mohamed N.
kaust.personWehbe, Nimer
kaust.personAlshareef, Husam N.
refterms.dateFOA2020-01-23T10:37:17Z
dc.date.published-online2016-07-12
dc.date.published-print2016-09


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