Multistate Resistive Switching Memory for Synaptic Memory Applications
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/621633
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AbstractReproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
CitationHota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.
JournalAdvanced Materials Interfaces