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    Multistate Resistive Switching Memory for Synaptic Memory Applications

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    Type
    Article
    Authors
    Hota, Mrinal Kanti cc
    Hedhili, Mohamed N. cc
    Wehbe, Nimer
    McLachlan, Martyn A.
    Alshareef, Husam N. cc
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Surface Science
    Date
    2016-07-12
    Online Publication Date
    2016-07-12
    Print Publication Date
    2016-09
    Embargo End Date
    2017-07-12
    Permanent link to this record
    http://hdl.handle.net/10754/621633
    
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    Abstract
    Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
    Citation
    Hota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.
    Publisher
    Wiley
    Journal
    Advanced Materials Interfaces
    DOI
    10.1002/admi.201600192
    Additional Links
    http://spiral.imperial.ac.uk/bitstream/10044/1/43070/2/HfZnOx%20Manuscrippt_08%2003%202016hna%5b2%5d.pdf
    ae974a485f413a2113503eed53cd6c53
    10.1002/admi.201600192
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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