Multistate Resistive Switching Memory for Synaptic Memory Applications
Type
ArticleKAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Surface Science
Date
2016-07-12Online Publication Date
2016-07-12Print Publication Date
2016-09Embargo End Date
2017-07-12Permanent link to this record
http://hdl.handle.net/10754/621633
Metadata
Show full item recordAbstract
Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimCitation
Hota MK, Hedhili MN, Wehbe N, McLachlan MA, Alshareef HN (2016) Multistate Resistive Switching Memory for Synaptic Memory Applications. Advanced Materials Interfaces 3: 1600192. Available: http://dx.doi.org/10.1002/admi.201600192.Publisher
WileyJournal
Advanced Materials InterfacesAdditional Links
http://spiral.imperial.ac.uk/bitstream/10044/1/43070/2/HfZnOx%20Manuscrippt_08%2003%202016hna%5b2%5d.pdfae974a485f413a2113503eed53cd6c53
10.1002/admi.201600192