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dc.contributor.authorKhan, Jafar Iqbal
dc.contributor.authorAdhikari, Aniruddha
dc.contributor.authorSun, Jingya
dc.contributor.authorPriante, Davide
dc.contributor.authorBose, Riya
dc.contributor.authorShaheen, Basamat
dc.contributor.authorNg, Tien Khee
dc.contributor.authorZhao, Chao
dc.contributor.authorBakr, Osman
dc.contributor.authorOoi, Boon S.
dc.contributor.authorMohammed, Omar F.
dc.date.accessioned2016-11-03T13:21:06Z
dc.date.available2016-11-03T13:21:06Z
dc.date.issued2016-03-03
dc.identifier.citationKhan JI, Adhikari A, Sun J, Priante D, Bose R, et al. (2016) Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. Small 12: 2313–2320. Available: http://dx.doi.org/10.1002/smll.201503651.
dc.identifier.issn1613-6810
dc.identifier.pmid26938476
dc.identifier.doi10.1002/smll.201503651
dc.identifier.urihttp://hdl.handle.net/10754/621620
dc.description.abstractManaging trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipJ.I.K. and A. A. contributed equally to this work. The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). The authors gratefully acknowledge the funding support from KAUST and King Abdul-Aziz City for Science and Technology TIC (Technology Innovation Center) for Solid-State Lighting at KAUST. T.K.N. and B.S.O. gratefully acknowledge contribution from Prof. Pallab Bhattacharya, University of Michigan, Ann Arbor. T.K.N. and D.P. gratefully acknowledge Rami T. Elafandy (Photonics Laboratory, KAUST) for his effort and assistance in scanning electron microscopy experiments.
dc.publisherWiley-Blackwell
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/smll.201503651/full
dc.subject4D ultrafast microscopy
dc.subjectCarrier recombination
dc.subjectCharge carrier dynamics
dc.subjectInGaN nanowires
dc.subjectPassivation
dc.titleEnhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalSmall
kaust.personKhan, Jafar Iqbal
kaust.personAdhikari, Aniruddha
kaust.personSun, Jingya
kaust.personPriante, Davide
kaust.personBose, Riya
kaust.personShaheen, Basamat
kaust.personNg, Tien Khee
kaust.personZhao, Chao
kaust.personBakr, Osman
kaust.personOoi, Boon S.
kaust.personMohammed, Omar F.


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