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    Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy

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    Type
    Article
    Authors
    Khan, Jafar Iqbal
    Adhikari, Aniruddha cc
    Sun, Jingya
    Priante, Davide cc
    Bose, Riya
    Shaheen, Basamat S. cc
    Ng, Tien Khee cc
    Zhao, Chao cc
    Bakr, Osman cc
    Ooi, Boon S. cc
    Mohammed, Omar F. cc
    KAUST Department
    Chemical Science Program
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Functional Nanomaterials Lab (FuNL)
    KAUST Catalysis Center (KCC)
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Photonics Laboratory
    Physical Characterization
    Physical Science and Engineering (PSE) Division
    Ultrafast Laser Spectroscopy and Four-dimensional Electron Imaging Research Group
    Date
    2016-03-03
    Online Publication Date
    2016-03-03
    Print Publication Date
    2016-05
    Permanent link to this record
    http://hdl.handle.net/10754/621620
    
    Metadata
    Show full item record
    Abstract
    Managing trap states and understanding their role in ultrafast charge-carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)-based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time-resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four-dimensional scanning ultrafast electron microscopy (4D S-UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time-resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high-performance NW-based optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Citation
    Khan JI, Adhikari A, Sun J, Priante D, Bose R, et al. (2016) Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. Small 12: 2313–2320. Available: http://dx.doi.org/10.1002/smll.201503651.
    Sponsors
    J.I.K. and A. A. contributed equally to this work. The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). The authors gratefully acknowledge the funding support from KAUST and King Abdul-Aziz City for Science and Technology TIC (Technology Innovation Center) for Solid-State Lighting at KAUST. T.K.N. and B.S.O. gratefully acknowledge contribution from Prof. Pallab Bhattacharya, University of Michigan, Ann Arbor. T.K.N. and D.P. gratefully acknowledge Rami T. Elafandy (Photonics Laboratory, KAUST) for his effort and assistance in scanning electron microscopy experiments.
    Publisher
    Wiley
    Journal
    Small
    DOI
    10.1002/smll.201503651
    PubMed ID
    26938476
    Additional Links
    http://onlinelibrary.wiley.com/doi/10.1002/smll.201503651/full
    ae974a485f413a2113503eed53cd6c53
    10.1002/smll.201503651
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Chemical Science Program; Material Science and Engineering Program; Photonics Laboratory; KAUST Catalysis Center (KCC); KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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