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dc.contributor.authorLi, Peng
dc.contributor.authorXia, Chuan
dc.contributor.authorZhu, Zhiyong
dc.contributor.authorWen, Yan
dc.contributor.authorZhang, Qiang
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2016-11-03T08:32:57Z
dc.date.available2016-11-03T08:32:57Z
dc.date.issued2016-06-01
dc.identifier.citationLi P, Xia C, Zhu Z, Wen Y, Zhang Q, et al. (2016) Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors. Advanced Functional Materials 26: 5679–5689. Available: http://dx.doi.org/10.1002/adfm.201504999.
dc.identifier.issn1616-301X
dc.identifier.doi10.1002/adfm.201504999
dc.identifier.urihttp://hdl.handle.net/10754/621596
dc.description.abstractIn spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.description.sponsorshipNational Natural Science Foundation of China[11204207]
dc.description.sponsorshipPhD Programs Foundation of the Ministry of Education of China[20120032120074]
dc.publisherWiley
dc.subjectEpitaxy
dc.titleUltrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Supercomputing Laboratory (KSL)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSupercomputing, Computational Scientists
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalAdvanced Functional Materials
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology; Institute of Advanced Materials Physics; Faculty of Science; Tianjin University; Tianjin 300072 P. R. China
kaust.personLi, Peng
kaust.personXia, Chuan
kaust.personZhu, Zhiyong
kaust.personWen, Yan
kaust.personZhang, Qiang
kaust.personAlshareef, Husam N.
kaust.personZhang, Xixiang
dc.date.published-online2016-06-01
dc.date.published-print2016-08


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